Module Descriptors
POWER SEMICONDUCTOR DEVICES
ELEC70150
Key Facts
Faculty of Computing, Engineering and Sciences
Level 7
15 credits
Contact
Leader: Noel Shammas
Email: N.Y.A.Shammas@staffs.ac.uk
Hours of Study
Scheduled Learning and Teaching Activities: 36
Independent Study Hours: 114
Total Learning Hours: 150
Assessment
- REPORT weighted at 40%
- EXAMINATION - UNSEEN IN EXAMINATION CONDITIONS weighted at 60%
Module Details
Module Learning Strategies
- Class attendance
- Directed learning and reading
- Use of software packages
- Lecture/laboratory/tutorial 36 hours
- Student centred learning 114 hours
- Directed learning and reading
- Use of software packages
- Lecture/laboratory/tutorial 36 hours
- Student centred learning 114 hours
Module Indicative Content
1. Fundamentals of semiconductors: semi conducting materials, charge carriers, transport, lifetime, temperature dependence.
2. Power Diodes: Junctions and interfaces, leakage current, avalanche breakdown, punch- through, PIN diode, Forward and reverse bias, switching transients, forward and reverse recovery, the Schottky barrier diode.
3. Power transistors BJT's: structure, operating regions, emitter injection efficiency, base transport factor, static and dynamic characteristics.
4. Power MOSFETs: structure, static blocking, forward conduction, switching performance
5. Thyristors: Structure and Operation, static blocking, forward conduction, switching characteristics, dv/dt capability, L.T.T., self-protection, G.T.O.
6. IGBTs: Structure and Operation, static blocking, forward conduction, switching characteristics.
7. Reliable Operation: Thermal resistance and transient thermal impedance, packaging of P.S.D, series and parallel operation.
2. Power Diodes: Junctions and interfaces, leakage current, avalanche breakdown, punch- through, PIN diode, Forward and reverse bias, switching transients, forward and reverse recovery, the Schottky barrier diode.
3. Power transistors BJT's: structure, operating regions, emitter injection efficiency, base transport factor, static and dynamic characteristics.
4. Power MOSFETs: structure, static blocking, forward conduction, switching performance
5. Thyristors: Structure and Operation, static blocking, forward conduction, switching characteristics, dv/dt capability, L.T.T., self-protection, G.T.O.
6. IGBTs: Structure and Operation, static blocking, forward conduction, switching characteristics.
7. Reliable Operation: Thermal resistance and transient thermal impedance, packaging of P.S.D, series and parallel operation.
Module Additional Assessment Details
1) Two formal reports 40%, learning outcomes 3 and 4.
2) Two hour written examination 60%, learning outcomes 1 and 2
The two formal reports detail two different areas of coursework. They will present work carried out during the course and will use a range of diverse tools. The total mark allocated for these two pieces of work is 40%.
Students will also attend a 2 hour written examination (60%) at the end of the module.
2) Two hour written examination 60%, learning outcomes 1 and 2
The two formal reports detail two different areas of coursework. They will present work carried out during the course and will use a range of diverse tools. The total mark allocated for these two pieces of work is 40%.
Students will also attend a 2 hour written examination (60%) at the end of the module.
Module Resources
Electronic Laboratory
Software packages (e.g. ISE T-CAD etc)
Video Material
Lectures, library, computing facilities, Internet
Software packages (e.g. ISE T-CAD etc)
Video Material
Lectures, library, computing facilities, Internet
Module Special Admissions Requirements
Knowledge of Basic Semiconductor Devices
Module Texts
1. Power Semiconductor Devices - Theory and Application, V.Benda, J.Gower, D.A.Grant, 1999, John Wiley & Sons, ISBN 0-47-97644-X
2. Power semiconductor Devices, B.J. Baliga, 1996, PWS Publishing, ISBN 0-534-94098-6
3. The Insulated Gate Bipolar Transistor IGBT, V.K. Khanna, 2003, John Wacley, ISBN 0-471-23845-7
4. Power Electronics- Circuits, Devices and Applications, 3rd Ed, M. Rashid, 2003, Prentice Hall, ISBN 0-13-334483-5
2. Power semiconductor Devices, B.J. Baliga, 1996, PWS Publishing, ISBN 0-534-94098-6
3. The Insulated Gate Bipolar Transistor IGBT, V.K. Khanna, 2003, John Wacley, ISBN 0-471-23845-7
4. Power Electronics- Circuits, Devices and Applications, 3rd Ed, M. Rashid, 2003, Prentice Hall, ISBN 0-13-334483-5